Micro- and nanofabrication installations

You are here

A nationally ranked micro- and nanofabrication plant

With its 1400 m2 of cleanroom area, the MIMENTO (microfabrication for mechanics, nanosciences, thermics and optics) installations make its high-technology equipment available to both industry and to academics.

R & D studies are thus possible in micro-mechanics, micro-nano-optics and micro-nano-acoustics leading to the design and production of MEMS, MOEMS and NEMS devices.

The technological installations are equipped with a pilot line for industrial microfabrication (SAW/BAW and RF-MEMS components). The line is available for orders for prototypes, pre-production and development for numerous materials (silicium, quartz, niobate, etc.).

The BTR network: Since 2004 the MIMENTO installations have been a part of the national network of large technological facilities for basic technological research, the Renatech network supported by the BTR program.

From fundamental research to industrial activity

MIMENTO, the FEMTO-ST’s micro- and nanofabrication installations are comprised of three modules:RENATECH

  • Fundamental research in nanotechnology
  • Microfabrication in cleanrooms equipped with several complete production lines for micro-devices, in particular made from materials other than silicium
  • Industrial R & D and innovation: a pilot line for the fabrication of piezoelectric micro- and nano-components undertaken collectively in the institute’s pilot workshop

The Institute’s facilities





Optical mask generator



masqueur lithographie

Optical mask generator Heidelberg DWL 200

  • 4 and 5 inch Chromium/Glass optical masks
  • it defines microstructures directly on 3 to 6 inch wafers
  • maximum resolutions: 0.9µm for the 4mm writing head and 1.8µm for the 10mm one

Masque pour réalisation de peignes interdigitésMask

Coating machines



tournette RC-8 KARLSUSSTournette RC-8 KARLSUSS
  • Maximum substrate size: 4 inch
  • Programming: up to 9 programs
  • Velocity: 10 to 5000rpm
  • Acceleration: 100 to 5000rpm/sec
  • Coating time: 1 to 999 seconds.
Spray coatingSpray coatingResins now used :
  • S 1813 : from 3 to 8 µm thick
  • SU-8 : from  8 to 20 µm thick
Spray coating




Aligneur Double Face EVG 620Double-side EVG 620 alignment system
  • Mask size: 3, 4 or 5 inch
  • Substrates: 2, 3 or 4 inch
  • Nominal lamp power: 13mW/cm2
  • Exposure method: time or constant energy,
  • Exposure modes: proximity, soft contact, hard contact or vacuum contact (vacuum chamber),
  • Alignment accuracy: 0.5µm (on top) 1µm (on bottom),

Theoretical resolution:

  • soft contact : < 2 µm,
  • hard contact : 0.8 to 1.5µm,
  • vacuum contact: 0.6 µm

Aligneur Simple Face SETSimple-side alignment system
  • Mask size: 3, 4 and 5 inch,
  • Useful opening: square sides: 60 and 76 mm,
  • Wafer holder: up to 4 inch,
  • Alignment microscope: monocular, magnification: 8 to 40,
  • Typical lighting power: 10 to 20mW/cm2,
  • Exposure modes: soft contact or vacuum contact with vacuum chamber
  • Resolution: smallest exposed and developed patterns: 1.5µm (in vacuum contact)


360/N Laminor (Rohm and Haas Electronic)

Résines photosensibles


  • negative resists: for example, SU-8 resist
  • positive resists: AZ9260 and S1813 resists
  • Image reversal resists: AZ5214, TI09XR
  • Particular resist for plasma etching
  • Particular resists for LIFT-OFF

Méthode LIFT-OFF
Méthode LIFT OFF

Top of page

Thin films deposition

Cathode sputtering


Pulvérisation DC : PLASSYS

DC sputtering: PLASSYS

  • Gas: argon;
  • cathode: three 4 inch DC magnetron sources with one reinforced magnetron adapted to nickel and one 6 inch DC magnetron source;
  • available targets: Al, Ti, Cr, Ni, Cu, Au, Nb, W, Pd, Pt, Mo;
  • DC supplying: 20mA to 1A (1 kW max. Power, intensity or voltage control);
  • substrate polarisations: ionic etching 20 to 250W (RF Generator HFS 500E), wafer holder: 4 samples up to 4 inch rotary and positionable;
  • no substrate heating; no charge lock;
  • pumping system: 2063 alcatel backing pump and Cryo Torr 8 CTI Cryogenics secondary pump.


Pulvérisation Réactive d'ALN : PLASSYS

Cathode reactive sputtering: PLASSYS

  • gas: argon, nitrogen;
  • cathode: 4 inch magnetron;
  • supplying: 1.5 kW in DC;
  • target: Al;
  • substrate polarisations: RF 300W max;
  • substrate holder: one sample up to 4 inch;
  • substrate heating: up to 800 °C;
  • charge lock;
  • secondary pump: cryogenic pump.
Pulvérisation Cathodique PLASSYS

PLASSYS Cathode sputtering

  • available targets: Ni, Cr, Au, Al, Ti, W, Cu;
  • cathodes: three 4 inch magnetron cathodes;
  • heating chuck;
  • Joule effect evaporation source
Pulvérisation AC450 DC/RF (Alliance Concept)

Alliance Concept AC450 DC/RF Sputtering

  • gas: argon, acetylene, nitrogen, oxygen and any other gas or gas mixture;
  • two 2 inch DC magnetron cathodes with one reinforced magnetron adapted to magnetic materials;
  • one 2 inch RF magnetron cathode;
  • two 2 inch DC magnetron cathodes in confocal position to deposit two materials simultaneously;
  • available targets: Al, Ti, Cr, Ni, Cu, Ag, Nb, W, V, Fe, Mo, B, Zr, Ta, Si, C, Co, NiTi, TiAl, SiO2, Ni2MnGa or any other target or alloy materials,
  • two DC supplying: 1.5 kW max.
  • Power, intensity, or voltage control.
  • Two RF supplying:(13.56 MHz) 300W;
  • substrate polarisation: DC or RF mode,
  • wafer holder: three inch rotary positionable polarisable and heating (up to 850ºC) holder,
  • fitted with an ion beam (microwaves 2.45GHz): ionic bombardment with argon ions whose energy reaches 2000eV,
  • pumping system: VARIAN 1002 Turbo VARIAN VT 1001 backing pump



SI 500 D ICP Deposition System

SI 500 D ICP Deposition System

Deposition of silicon nitride, silicon oxynitride and silicon oxide
at low temperature by plasma deposition system

Specification of gases process : SiH4, NH3, O2, Ar
Vaccuum system : Pressure <10-6 mbar 
ICP source :

Pressure: 1 Pa ...20 Pa
Power: 100 ... 1200 W
Plasma density: up to 5*1011 cm-3

RF power supply : @13.56 MHz, 1200 W

 Top of page

Chemical etching

Chemical etching



Paillasse d'usinage humideWet etching bench (KOH BHF)

  • solution used: potassium hydroxide KOH, H2O;
  • concentration: 41% in mass (10 moles/litre);
  • temperature: 55°C;
  • stirring: 300 rpm.

For quartz and SiO2, the solution used is buffered hydrofluoric acid (BHF).


Vapour HF Etch

Vapour HF Etching


Paillasse de Si poreuxPorous Si bench

  • 4 inch substrates;
  • a HF tank: silicon substrate anodization (hydrofluoric acid electrolysis),
  • two rinsing tanks (calcium carbonate water),
  • two DI water tanks with overflows and nitrogen bubbling for rinsing;
  • a diluted acetic acid tank to pull out carbonate particles lying on the substrate and the wafer holder,
  • an isopropanol tank.

Eletrolytic Microfabrication: Electroforming bench (Ni-Cu-Au)

  • substrate: metallic or metallized up to 5 inch;
  • deposited materials: nickel, copper, and gold by immersion;
  • electrolyte temperature: 50°C;
  • deposition velocity: some µm/h to a few tens µm/h;
  • thickness: limited by the resist mould thickness (generally a few tens microns);

Measured characteristics of the electroplated nickel:

  • Young modulus: 200Gpa;
  • hardness: 300 to 600Hv;
  • elasticity limit: 300Mpa;
  • roughness (Rt): 0.8 to 1.2µm;
  • intrinsic strain:
    • -30 to 20MPa on Cu,
    • 140 to 220MPa on Si.



Top of page

Plasma Etching

Plasma Etching



Bâti de gravure profonde DRIE, ALCATEL
Deep Reactive Ion Etching (DRIE) ALCATEL

Parameters that can be adjusted:

  • pressure (1 to 10Pa),
  • gas flow (50 to 500sccm),
  • wafer holder temperature,
  • RF source power (1000 to 2000W),
  • wafer holder power (up to 200 W),
  • SF6/C4F8 cycle time;

masks used:

  • resist,
  • silica,
  • metal (nickel, chromium, aluminium);

wafer holder specified for 4 inch wafers

Microactionneur électrostatique
electrostatic microactuator


Deep Reactive Ion Etching-ICP Silicium (RAPIER SPTS)

Si - Bosch Process 

Graveur RIE fluorée PLASSYS

Ionic Reactive Etching (RIE) with fluorinated chemistry: PLASSYS

  • RF power: 300W max;
  • gases: SF6, O2, CHF3, C2F6;
  • substrate: 4 inch max on a silica plate;
  • end-attack detector: laser interferometry;
  • etched materials: Si, SiO2, Si3N4, Quartz, Ti, LiNbO3
Bâti de gravure ICP-DRIE STS MPO 562

ICP-DRIE Etching machine STS MPO 562

Technical characteristics:

  • ICP Plasma source: 3kW RF
  • Bias source: 1.5 kW RF
  • Mechanical clamping with thermostated chuck from -20 to 80°C
  • Turbomolecular secondary pump (2000 l/s)
  • Sample sizes: from chips to 6 inch wafers
  • Available gases: SF6, CF4, C4F8, He, O2 et Ar

Etched materials: Silica SiO2, Silicon nitride Si3N4, Pyrex, Gallium ortho-phosphate GaPO4, Langasite LGS, Langatate LGT, Fused silica, Quartz, Lithium niobate LiNbO3, Lead titanate PbTiO3…

Gravure Quartz coupe AT d’une profondeur de 42µm avec une verticalité de flancs de 85°
Gravure Quartz coupe AT d’une profondeur de 42µm avec une verticalité de flancs de 85°


Decoating and surface treatment (NANOPLAS)

ICP source 

Top of page

Thermal processing

Thermal processing


Triple-tube oven

Triple-tube oven for oxidation and thermal treatments

Tub 1:

- Tube diameter: 20 cm
- Type of oxidation: Dry/Wet
- Oxidation temperature: 1000° - 1100°C
- Maximum temperature: 1200°C
- Maximum temperature increase rate: 100°C/min
- Gas: Oxygen

Tube 2:

- Tube diameter: 17 cm
- Diffusion temperature: 500°C
- Maximum temperature: 1200°C
- Maximum temperature increase rate: 100°C/min
- Gas: Oxygen

Tube 3:

- Tube diameter: 17 cm
- Annealing temperature: 500°C
- Maximum temperature: 1200°C
- Maximum temperature increase rate: 100°C/min
- Gas: Argon and Nitrogen


Top of page





Gravure par faisceaux d'ions focalisés (FIB)

Focused Ionic Beam etching: FIB, ORSAY PHYSICS

  • The etching velocity is a linear function of time and sample current.
  • It is about 0.1 µm3.nA-1.s-1.
  • The total field is limited at 300µm.
gravure FIB
  • Lithographie électronique Raith E_Line

    Electron beam lithography
    Raith E_Line

  • Filament : Schottky TFE
  • Stage displacement : 100mm x 100mm x 30mm
  • Spot size : <2nm @ 20keV
  • Curent range : 5pA – 20nA
  • Curent density : > 7500 A/cm²
  • Curent stability : <0 .5%/h
  • Detectors : In Lens, Everhart Thornley
  • Minimum line width : 20nm
  • Stitching accuracy : 60nm (mean 3 sigma)
  • Layer to layer adjustment accuracy : 40nm (mean 3 sigma)
  • Sample size : from chip to 4 inch wafers
  • File format : GDSII

ZEP 520A
Resist ZEP 520A




Top of page




  • several AFM, STL, SNOM, ..

Scanning probe microscope enables to visualize samples at atomic scale.


Scanning Electron Microscope environnemental FEI Quanta 450W and EDS EDAX APEX 2i


Contact angle measurement : Digidrop – MCAT goniometer (GBX)

Profilomètre Tencor Alpha Step IQ

Tencor Alpha-Step IQ surface profiler

  • accuracy: 0.1 %;
  • maximum scanning length: 10 mm from left to right and 2 mm from right to left;
  • scanning velocity: 2 to 200 µm/s;
  • lateral resolution: given by the diamond point (cone of 60° and 5 µm terminal radius), sample dimensions: 4 inch;
  • sample thickness: up to 17.5 mm;
  • contact force: adjustable from 1 to 100 mg;
  • gauge block: 6500 Å aluminium Tencor Instruments;

thickness measurements : measurable step height: some nm to 1 500 µm in 3 ranges: 0 – 20 µm, 0 - 400 µm, 0 - 2 000 µm;

roughness and waviness measurement : display of Ra, Rq, Rt, Wa, Wq et Wt parameters, cut-off filter: adjustable (generally 80 µm)

Fizeau Interferometer

Fizeau Interferometer (Zygo)

  • 1000x1000 pixels camera
  • Motorised zoom x1-x6
  • accuracy : <0.1 nm
Rugosimètre tridimensionnel

Tridimensionnal roughness meter

  • maximum tip moving: ±250µm;
  • tip angle: 25º;
  • measurement capacity: pieces whose height is included between 0 and 300mm;
  • maximum stroke: 56mm;
  • accuracy: 0.10µm.

Spectroscopic ellipsometer

  • spectral measurement range: 260 << 2100 nm;
  • spot size: 50, 100 and 1000 m;
  • Xe source 75 W;
  • analysis system fitted with a thermally stabilized photoelastic modulator set on an automatic rotary stage (modulation frequency : 50 kHz)
  • ; HR460 high resolution double output monochromator with near-infrared extension (typical resolution: 0.1 nm); 2 detectors: a photomultiplicator and an InGaAs detector;
  • sample holder: 6 inch diameter with an adjustment system (in rotation...);
  • manual height adjustment, maximum thickness: 20 mm;
  • automatic goniometer: adjustable from 40 up to 90 degrees by steps of 0.05 degree (accuracy: 0.01 degree), auto-collimating eye piece;
  • thickness and index extraction softwares: DeltaPsi2 (version 2.0);
  • possibility of transmission measurements
Système d'analyse XPS

XPS analysis system (Thermo VG)

The XPS device is composed of:

  • X-ray source 45° tilted relatively to the surface;
  • multisample introduction lock;
  • analysis chamber where the target is irradiated;
  • detection and analysis system oriented perpendicularly to the surface;
  • a manipulator system (4 axis, /- 12.5mm Z=50 mm) with heating element (750°C ) (temperature studies possible).
  • The device set permanently works with a vacuum of 10-10 Torr.
NanojuraNon-contact dimensional surface characterisation (Nanojura) 

FSM 500 TCFSM 500 TC
Stress measurement as function of temperature up to 500°C

  • Stress range: 1 x 107 to 4 x 1010 dynes/cm2 (Provided that the wafer curvature change before and after processing is greater than 1micron (bow height) for a 170mm scan line)
  • Wafer sizes: 200mm or smaller
  • Scan range: Up to 170mm
  • Scan line: Single scan line at any wafer orientation
  • Mapping: Multi scan line mapping by manually rotating wafers. Max of 6 line mapping with 30 deg between each line
  • Repeatability: 1.0% (1 sigma) of average value using 5000A W wafer, measured 30X. (Ambient temperature)
  • Results Report: Film Stress, Radius, Wafer bow Height, Temperature, Date and Time
  • Laser type: Dual wavelength, 780nm and 650nm laser diodes


Micro System Analyser

Measuring 3D-Dynamics and Topography of MEMS and Microstructures

Top of page

Connector and packaging

Wafer bonding EVGBall bondingNanoprep NP12

Wafer Bonding EVG

TPT 16 - Semi Automatic Wire Bonder

Nanoprep NP12: surface plasma activation


CL200 cleaner bonder

CL200 Cleaner Bonder
and IR200 Inspection module

Circular saw





Chemical mechanical polisher: Alpsitec E460

Polisher LogitechFlip-Chip FC250

Top of page